Depth profiling studies of multilayer films with a C 60 + ion source

A. G. Sostarecz, S. Sun, C. Szakal, A. Wucher, N. Winograd

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A newly developed C 60 + primary ion beam source for time-of-flight secondary ion mass spectrometry has been employed for depth profiling analysis of organic and inorganic multilayer films. In particular, the C 60 + ion beam is used in the dc mode to sputter the surface for depth profiling while spectra are taken both with Ga + 15keV and C 60 + 20keV projectiles between sputtering cycles. From C 60 + bombardment of Langmuir-Blodgett films of barium arachidate, we find that cluster beams increase the secondary ion yields and ion formation efficiencies compared to monoatomic projectiles. For a 15-layer film, a barium arachidate fragment ion at m/z=208.9 was monitored as a function of C 60 + dose to determine that the sputtering rate is about 1.54nm/s and that the film interface position can be determined with a depth resolution of 16nm. For comparison purposes, a depth resolution of 8.7nm was measured for a sample consisting of 66nm of Ni and 53nm of Cr on Si(100) at a C 60 + beam energy of 20keV. The neutral atom yield was monitored via laser postionization to avoid matrix effects. These experiments show great promise for the use of C 60 + for depth profiling studies of multilayer targets.

Original languageEnglish (US)
Pages (from-to)179-182
Number of pages4
JournalApplied Surface Science
StatePublished - Jun 15 2004

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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