TY - GEN
T1 - Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory
AU - Govindaraj, Rekha
AU - Ghosh, Swaroop
N1 - Funding Information:
This paper is based on work supported by Semiconductor Research Corporation (#2442.001).
Publisher Copyright:
© 2015 IEEE.
PY - 2015/9/21
Y1 - 2015/9/21
N2 - Content Addressable Memory (CAM) is widely used in pattern matching, internet data processing and many other fields where searching a specific pattern of data is a major operation. Conventional CAMs suffer from area, power, and speed limitations. We propose a magnetic tunnel junction (MTJ) based Ternary CAM (TCAM). The proposed TCAM cell is 127 percent (33 percent) area efficient compared to conventional CMOS TCAM (spintronic TCAMs). We analyzed sense margin of the proposed TCAM with respect to 16, 32, 64, 128 and 256-bit words sizes in 22nm predictive technology. Simulations indicated reliable sense margin of 50mV even at 0.7V supply voltage. The worst case sense delay and sense margin of 256-bit TCAM is found to be 263ps and 220mV respectively at 1V supply voltage. The average search power consumed is 13mW and the search energy is 4.7fJ per bit search. The write time is 4ns and the write energy is 0.69pJ per bit.
AB - Content Addressable Memory (CAM) is widely used in pattern matching, internet data processing and many other fields where searching a specific pattern of data is a major operation. Conventional CAMs suffer from area, power, and speed limitations. We propose a magnetic tunnel junction (MTJ) based Ternary CAM (TCAM). The proposed TCAM cell is 127 percent (33 percent) area efficient compared to conventional CMOS TCAM (spintronic TCAMs). We analyzed sense margin of the proposed TCAM with respect to 16, 32, 64, 128 and 256-bit words sizes in 22nm predictive technology. Simulations indicated reliable sense margin of 50mV even at 0.7V supply voltage. The worst case sense delay and sense margin of 256-bit TCAM is found to be 263ps and 220mV respectively at 1V supply voltage. The average search power consumed is 13mW and the search energy is 4.7fJ per bit search. The write time is 4ns and the write energy is 0.69pJ per bit.
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U2 - 10.1109/ISLPED.2015.7273532
DO - 10.1109/ISLPED.2015.7273532
M3 - Conference contribution
AN - SCOPUS:84958524082
T3 - Proceedings of the International Symposium on Low Power Electronics and Design
SP - 309
EP - 314
BT - Proceedings of the International Symposium on Low Power Electronics and Design, ISLPED 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015
Y2 - 22 July 2015 through 24 July 2015
ER -