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Design and analysis of 6-T 2-MTJ ternary Content Addressable Memory
Rekha Govindaraj
,
Swaroop Ghosh
Electrical Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Conference contribution
5
Scopus citations
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Keyphrases
Magnetic Tunnel Junction
100%
Ternary Content Addressable Memory
100%
Sensing Margin
75%
Supply Voltage
50%
Pattern Matching
25%
Specific Pattern
25%
Power Consumed
25%
Power Limit
25%
Speed Limit
25%
Content-addressable Memory
25%
Write Energy
25%
Area-efficient
25%
Spintronics
25%
Internet Information
25%
Junction-based
25%
Writing Time
25%
Predictive Technology
25%
Computer Science
Computer Aided Manufacturing
100%
Supply Voltage
40%
Pattern Matching
20%
Content-Addressable Memory
20%
ternary content-addressable memory
20%
Data Processing
20%
Engineering
Magnetic Tunnel Junction
100%
Supply Voltage
40%
Magnetoelectronics
20%
Pattern Matching
20%
Speed Limitation
20%
Material Science
Data Processing
100%