Design and assembly of high-aspect-ratio silica-encapsulated nanostructures for nanoelectronics applications

This chapter summarizes our progress in design and assembly of new metal nanowire-based insulated interconnects and coaxially gated in-wire thin film transistors with the electrical characteristics closely approaching those of established large-scale planar thin film devices. Our approach relies on combining templated synthesis of nanostructures with wet successive adsorption techniques and electroplating. The strong advantages of this approach are (i) a possibility to easily incorporate various electronic materials into a single nanostructure, (ii) control of the device geometric parameters with sub-nanometer precision, and (iii) using low-energy-cost and environmentally friendly synthetic methods.