Design and Optimization of High-Speed Resonant Cavity Enhanced Schottky Photodiodes

Mutlu Gökkavas, Bora M. Onat, Ekmel Özbay, E. P. Ata, J. Xu, E. Towe, Selim Ünlü

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


Resonant cavity enhanced (RCE) photodiodes (PD's) are promising candidates for applications in optical communications and interconnects where high-speed high-efficiency photodetection is desirable. In RCE structures, the electrical properties of the photodetector remain mostly unchanged; however, the presence of the microcavity causes wavelength selectivity accompanied by a drastic increase of the optical field at the resonant wavelengths. The enhanced optical field allows to maintain a high efficiency for faster transit-time limited PD's with thinner absorption regions. The combination of an RCE detection scheme with Schottky PD's allows for the fabrication of high-performance photodetectors with relatively simple material structures and fabrication processes. In top-illuminated RCE Schottky PD's, a semitransparent Schottky contact can also serve as the top reflector of the resonant cavity. We present theoretical and experimental results on spectral and high-speed properties of GaAs-AlAs-InGaAs RCE Schottky PD's designed for 900-nm wavelength.

Original languageEnglish (US)
Pages (from-to)208-215
Number of pages8
JournalIEEE Journal of Quantum Electronics
Issue number2
StatePublished - Feb 1999

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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