Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer

Jia Mian Hu; Zheng Li; Long Qing Chen; Ce Wen Nan

doi:10.1002/adma.201201004

Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer

Jia Mian Hu, Zheng Li, Long Qing Chen, Ce Wen Nan

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.

Original language	English (US)
Pages (from-to)	2869-2873
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	21
DOIs	https://doi.org/10.1002/adma.201201004
State	Published - Jun 5 2012

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/adma.201201004

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@article{d7df6ce95a874ba0aa4ec005dfc684e2,

title = "Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer",

abstract = "A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.",

author = "Hu, {Jia Mian} and Zheng Li and Chen, {Long Qing} and Nan, {Ce Wen}",

year = "2012",

month = jun,

day = "5",

doi = "10.1002/adma.201201004",

language = "English (US)",

volume = "24",

pages = "2869--2873",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "21",

}

TY - JOUR

T1 - Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer

AU - Hu, Jia Mian

AU - Li, Zheng

AU - Chen, Long Qing

AU - Nan, Ce Wen

PY - 2012/6/5

Y1 - 2012/6/5

N2 - A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.

AB - A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84861829057&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861829057&partnerID=8YFLogxK

U2 - 10.1002/adma.201201004

DO - 10.1002/adma.201201004

M3 - Article

C2 - 22544814

AN - SCOPUS:84861829057

SN - 0935-9648

VL - 24

SP - 2869

EP - 2873

JO - Advanced Materials

JF - Advanced Materials

IS - 21

ER -

Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer

Abstract

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