Abstract
A simple and fully gate-voltage-controlled magnetic random access memory is designed based on anisotropic magnetoresistance. This multiferroic memory device consists of just a single magnetic film grown on a ferroelectric layer with bistable in-plane anisotropic ferroelastic or piezo strains induced by out-of-plane voltages. It can simultaneously achieve ultrahigh storage density, ultralow energy consumption, and GHz high-speed operation at room temperature.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2869-2873 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 21 |
| DOIs | |
| State | Published - Jun 5 2012 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
