Design of a voltage-controlled magnetic random access memory based on anisotropic magnetoresistance in a single magnetic layer

Keyphrases

• Magnetic Layer 100%
• Memory-based 100%
• Voltage Control 100%
• Anisotropic Magnetoresistance 100%
• Ultra-low Power 50%
• Room Temperature 50%
• Ultra-high 50%
• Gate Voltage 50%
• High-speed Operation 50%
• Strain-induced 50%
• Ferroelastic 50%
• Magnetic Films 50%
• Piezo 50%
• Memory Device 50%
• Ferroelectric Layer 50%

Material Science

• Anisotropic Magnetoresistance 100%
• Density 50%
• Ferroelectric Material 50%
• Multiferroic Material 50%
• Magnetic Film 50%