Abstract
Nonvolatile SRAM (nvSRAM) has emerged as a promising approach to reducing the standby energy consumption by storing the state into an in situ nonvolatile memory element and shutting down the power supply. Existing nvSRAM solutions based on a nonvolatile backup in magnetic tunnel junction and ReRAM, however, are costly in backup and restore energy due to static current. This cost results in a long break-even time (BET) when compared with a lowered voltage standby volatile SRAM. This brief proposes an nvSRAM based on ferroelectric FETs (FeFETs) that are capable of fully avoiding such static current. A simple differential backup and restore circuitry is proposed, achieving sub-fJ/cell total energy per backup and restore operation at the 10-nm node. This leads to hundreds of times BET improvement over existing ReRAM nvSRAM solutions. This nvSRAM also indicates the future FeFET design trends for such memory-logic synergy.
| Original language | English (US) |
|---|---|
| Article number | 7938658 |
| Pages (from-to) | 3037-3040 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 64 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 2017 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
