Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Xueqing Li, Kaisheng Ma, Sumitha George, Win San Khwa, John Sampson, Sumeet Gupta, Yongpan Liu, Meng Fan Chang, Suman Datta, Vijaykrishnan Narayanan

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


Nonvolatile SRAM (nvSRAM) has emerged as a promising approach to reducing the standby energy consumption by storing the state into an in situ nonvolatile memory element and shutting down the power supply. Existing nvSRAM solutions based on a nonvolatile backup in magnetic tunnel junction and ReRAM, however, are costly in backup and restore energy due to static current. This cost results in a long break-even time (BET) when compared with a lowered voltage standby volatile SRAM. This brief proposes an nvSRAM based on ferroelectric FETs (FeFETs) that are capable of fully avoiding such static current. A simple differential backup and restore circuitry is proposed, achieving sub-fJ/cell total energy per backup and restore operation at the 10-nm node. This leads to hundreds of times BET improvement over existing ReRAM nvSRAM solutions. This nvSRAM also indicates the future FeFET design trends for such memory-logic synergy.

Original languageEnglish (US)
Article number7938658
Pages (from-to)3037-3040
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number7
StatePublished - Jul 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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