Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs

S. H. Wang; S. E. Mohney; J. A. Robinson

doi:10.1088/0268-1242/20/8/018

Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs

S. H. Wang, S. E. Mohney, J. A. Robinson

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4 Scopus citations

Abstract

The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.

Original language	English (US)
Pages (from-to)	755-760
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	20
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/20/8/018
State	Published - Aug 1 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/20/8/018

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@article{8a67d68d31df4417b866b5e871cb9051,

title = "Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs",

abstract = "The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.",

author = "Wang, {S. H.} and Mohney, {S. E.} and Robinson, {J. A.}",

year = "2005",

month = aug,

day = "1",

doi = "10.1088/0268-1242/20/8/018",

language = "English (US)",

volume = "20",

pages = "755--760",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs

AU - Wang, S. H.

AU - Mohney, S. E.

AU - Robinson, J. A.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.

AB - The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.

UR - http://www.scopus.com/inward/record.url?scp=22844451363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22844451363&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/20/8/018

DO - 10.1088/0268-1242/20/8/018

M3 - Article

AN - SCOPUS:22844451363

SN - 0268-1242

VL - 20

SP - 755

EP - 760

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 8

ER -

Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs

Abstract

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