Abstract
The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 755-760 |
| Number of pages | 6 |
| Journal | Semiconductor Science and Technology |
| Volume | 20 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Fingerprint
Dive into the research topics of 'Design of thermally stable gate metallizations for AlGaAsSb/InAs HEMTs'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver