Determining the oxidation stability of SnSe under atmospheric exposure

Jonathan R. Chin; Bonnie G. Gardner; Marshall B. Frye; Derrick S.H. Liu; Sebastian A. Marini; Jeffrey Shallenberger; Matthew T. McDowell; Maria Hilse; Stephanie Law; Lauren M. Garten

doi:10.1557/s43579-024-00630-8

Determining the oxidation stability of SnSe under atmospheric exposure

Jonathan R. Chin, Bonnie G. Gardner, Marshall B. Frye, Derrick S.H. Liu, Sebastian A. Marini, Jeffrey Shallenberger, Matthew T. McDowell, Maria Hilse, Stephanie Law, Lauren M. Garten

Research output: Contribution to journal › Article › peer-review

Abstract

Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract: (Figure presented.)

Original language	English (US)
Pages (from-to)	1000-1006
Number of pages	7
Journal	MRS Communications
Volume	14
Issue number	5
DOIs	https://doi.org/10.1557/s43579-024-00630-8
State	Published - Oct 2024

All Science Journal Classification (ASJC) codes

General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1557/s43579-024-00630-8

Cite this

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title = "Determining the oxidation stability of SnSe under atmospheric exposure",

abstract = "Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract: (Figure presented.)",

author = "Chin, {Jonathan R.} and Gardner, {Bonnie G.} and Frye, {Marshall B.} and Liu, {Derrick S.H.} and Marini, {Sebastian A.} and Jeffrey Shallenberger and McDowell, {Matthew T.} and Maria Hilse and Stephanie Law and Garten, {Lauren M.}",

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doi = "10.1557/s43579-024-00630-8",

language = "English (US)",

volume = "14",

pages = "1000--1006",

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TY - JOUR

T1 - Determining the oxidation stability of SnSe under atmospheric exposure

AU - Chin, Jonathan R.

AU - Gardner, Bonnie G.

AU - Frye, Marshall B.

AU - Liu, Derrick S.H.

AU - Marini, Sebastian A.

AU - Shallenberger, Jeffrey

AU - McDowell, Matthew T.

AU - Hilse, Maria

AU - Law, Stephanie

AU - Garten, Lauren M.

PY - 2024/10

Y1 - 2024/10

N2 - Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract: (Figure presented.)

AB - Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract: (Figure presented.)

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DO - 10.1557/s43579-024-00630-8

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JO - MRS Communications

JF - MRS Communications

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ER -

Determining the oxidation stability of SnSe under atmospheric exposure

Abstract

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