Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

Ning Duan, S. Wang, X. G. Zheng, X. Li, Ning Li, Joe C. Campbell, Chad Wang, Larry A. Coldren

Research output: Contribution to journalArticlepeer-review

37 Scopus citations


It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche Photodiodes is critical to achieve low excess noise and high gain bandwidth product.

Original languageEnglish (US)
Pages (from-to)568-572
Number of pages5
JournalIEEE Journal of Quantum Electronics
Issue number4
StatePublished - Apr 2005

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this