Abstract
It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche Photodiodes is critical to achieve low excess noise and high gain bandwidth product.
Original language | English (US) |
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Pages (from-to) | 568-572 |
Number of pages | 5 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 41 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2005 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering