Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

Ning Duan; S. Wang; X. G. Zheng; X. Li; Ning Li; Joe C. Campbell; Chad Wang; Larry A. Coldren

doi:10.1109/JQE.2005.843613

Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

Ning Duan
, S. Wang
, X. G. Zheng
, X. Li
, Ning Li
, Joe C. Campbell
, Chad Wang
, Larry A. Coldren

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche Photodiodes is critical to achieve low excess noise and high gain bandwidth product.

Original language	English (US)
Pages (from-to)	568-572
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	41
Issue number	4
DOIs	https://doi.org/10.1109/JQE.2005.843613
State	Published - Apr 2005

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2005.843613

Cite this

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title = "Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes",

abstract = "It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche Photodiodes is critical to achieve low excess noise and high gain bandwidth product.",

author = "Ning Duan and S. Wang and Zheng, \{X. G.\} and X. Li and Ning Li and Campbell, \{Joe C.\} and Chad Wang and Coldren, \{Larry A.\}",

year = "2005",

month = apr,

doi = "10.1109/JQE.2005.843613",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Duan, Ning

AU - Wang, S.

AU - Zheng, X. G.

AU - Li, X.

AU - Li, Ning

AU - Campbell, Joe C.

AU - Wang, Chad

AU - Coldren, Larry A.

PY - 2005/4

Y1 - 2005/4

N2 - It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche Photodiodes is critical to achieve low excess noise and high gain bandwidth product.

AB - It is shown that optimization of the electric field profile in the absorption region of separate absorption, charge, and multiplication InGaAs-InAlAs avalanche Photodiodes is critical to achieve low excess noise and high gain bandwidth product.

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UR - https://www.scopus.com/pages/publications/17644367504#tab=citedBy

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DO - 10.1109/JQE.2005.843613

M3 - Article

AN - SCOPUS:17644367504

SN - 0018-9197

VL - 41

SP - 568

EP - 572

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 4

ER -

Detrimental effect of impact ionization in the absorption region on the frequency response and excess noise performance of InGaAs-InAlAs SACM avalanche photodiodes

Abstract

All Science Journal Classification (ASJC) codes

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