Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors

Seung Hwan Lee; Hong Ki Kim; Min Gyu Kang; Chong Yun Kang; Sung Gap Lee; Young Hie Lee; Jung Rag Yoon

doi:10.1109/LED.2014.2320295

Development and electrical properties of (Ca_0.7Sr_0.3) (Zr_0.8Ti_0.2)O₃ thin film applied to embedded decoupling capacitors

Seung Hwan Lee, Hong Ki Kim, Min Gyu Kang, Chong Yun Kang, Sung Gap Lee, Young Hie Lee, Jung Rag Yoon

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A formed device embedded-type 0402 sized (Ca_0.7Sr _0.3)(Zr_0.8Ti_0.2)O₃ (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm² at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

Original language	English (US)
Article number	6814281
Pages (from-to)	777-779
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/LED.2014.2320295
State	Published - Jul 2014

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2320295

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@article{bc5c388cb43f4918a3e42ce5820ca1b8,

title = "Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors",

abstract = "A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.",

author = "Lee, {Seung Hwan} and Kim, {Hong Ki} and Kang, {Min Gyu} and Kang, {Chong Yun} and Lee, {Sung Gap} and Lee, {Young Hie} and Yoon, {Jung Rag}",

year = "2014",

month = jul,

doi = "10.1109/LED.2014.2320295",

language = "English (US)",

volume = "35",

pages = "777--779",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Development and electrical properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 thin film applied to embedded decoupling capacitors

AU - Lee, Seung Hwan

AU - Kim, Hong Ki

AU - Kang, Min Gyu

AU - Kang, Chong Yun

AU - Lee, Sung Gap

AU - Lee, Young Hie

AU - Yoon, Jung Rag

PY - 2014/7

Y1 - 2014/7

N2 - A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

AB - A formed device embedded-type 0402 sized (Ca0.7Sr 0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 °C-125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 ω and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.

UR - http://www.scopus.com/inward/record.url?scp=84903618460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903618460&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2320295

DO - 10.1109/LED.2014.2320295

M3 - Article

AN - SCOPUS:84903618460

SN - 0741-3106

VL - 35

SP - 777

EP - 779

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6814281

ER -

Development and electrical properties of (Ca_0.7Sr_0.3) (Zr_0.8Ti_0.2)O₃ thin film applied to embedded decoupling capacitors

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All Science Journal Classification (ASJC) codes

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