Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique

H. Y. Lee; Shujun Zhang; Thomas R. Shrout

doi:10.1109/ISAF.2008.4693824

Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique

H. Y. Lee, Shujun Zhang, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on T_RT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high T_C/E_C PMN-PZT single crystals (T_RT=144°C and E_C=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.

Original language	English (US)
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs	https://doi.org/10.1109/ISAF.2008.4693824
State	Published - Dec 1 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: Feb 23 2008 → Feb 28 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	2

Other

Other	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/Territory	United States
City	Santa Fe, NM
Period	2/23/08 → 2/28/08

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2008.4693824

Cite this

Lee, H. Y., Zhang, S., & Shrout, T. R. (2008). Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. In 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 Article 4693824 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 2). https://doi.org/10.1109/ISAF.2008.4693824

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title = "Development of high TC PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique",

abstract = "Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144°C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.",

author = "Lee, {H. Y.} and Shujun Zhang and Shrout, {Thomas R.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ISAF.2008.4693824",

language = "English (US)",

isbn = "1424427444",

series = "IEEE International Symposium on Applications of Ferroelectrics",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Lee, HY, Zhang, S & Shrout, TR 2008, Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008., 4693824, IEEE International Symposium on Applications of Ferroelectrics, vol. 2, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 2/23/08. https://doi.org/10.1109/ISAF.2008.4693824

Development of high T_C PMN-PZT piezoelectric single crystals by the solid-state crystal growth (SSCG) technique. / Lee, H. Y.; Zhang, Shujun; Shrout, Thomas R.
17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. 2008. 4693824 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144°C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.

AB - Single crystals in the ternary MPB PMNPZ-PT system with relatively high Tcs and Ecs were fabricated by the solid-state single crystal growth (SSCG) technique and their dielectric and piezoelectric properties characterized. The dc bias effect on TRT (or the application usage temperature range), the high field unipolar strain, and the strain fatigue behavior induced by a phase change were investigated. Compared to PMN-PT single crystals, the high TC/EC PMN-PZT single crystals (TRT=144°C and EC=4.6kV/cm) were found to exhibit a much wider usage range with respect to electric field as well as temperature, and thus are better candidates for application in transducers and actuators.

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