TY - GEN
T1 - Development of near UV laser diodes
AU - Kirste, Ronny
AU - Mita, Seiji
AU - Reddy, Pramod
AU - Franke, Alexander
AU - Guo, Qiang
AU - Wang, Ke
AU - Collazo, Ramon
AU - Sitar, Zlatko
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/8
Y1 - 2019/8
N2 - The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.
AB - The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.
UR - http://www.scopus.com/inward/record.url?scp=85074258942&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85074258942&partnerID=8YFLogxK
U2 - 10.1109/RAPID.2019.8864425
DO - 10.1109/RAPID.2019.8864425
M3 - Conference contribution
AN - SCOPUS:85074258942
T3 - 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings
BT - 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE Research and Applications of Photonics in Defense Conference, RAPID 2019
Y2 - 19 August 2019 through 21 August 2019
ER -