Abstract
We report a new type of black silicon: flexible black silicon. A silicon-on-insulator (SOI) wafer is irradiated by automatically scanning a femtosecond laser and then split by etching out the SOI silica middle layer. Large-area, uniform micro spikes on the surface of a very thin flexible silicon layer are obtained. The black silicon shows good flexibility and optical properties. The absorption spectrum of the flexible black silicon is as high as 97% in the visible and insensitive to the change of the incident angle of the light, which makes it a potential good candidate as an absorber for the solar-thermo generator.
Original language | English (US) |
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Pages (from-to) | 1072-1075 |
Number of pages | 4 |
Journal | Optics Communications |
Volume | 284 |
Issue number | 4 |
DOIs | |
State | Published - Feb 15 2011 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering