Abstract
Semiconductor nanocrystal quantum dots (QDs) acted as luminescent layer in organic light emitting device can be tuned across from visible to near-infrared spectrum by changing the size of QD, and device has a narrow bandwidth (full-width at half-maximum (FWHM) of the electroluminescence (EL) peak of ~30 nm). The research achievements of structures of quantum dot light-emitting diodes (QD-LED) and fabrication process of device achieved by the researchers in the field are summarized, and some new research results achieved in the subject are showed. Many structures of QD-LED which have been demonstrated are especially introduced. Merits and defects of structures of QD-LED mentioned above are analyzed, which may be more convenient to improve the structure of QD-LED and make it further commercial.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 539-544 |
| Number of pages | 6 |
| Journal | Guangxue Jishu/Optical Technique |
| Volume | 38 |
| Issue number | 5 |
| State | Published - Sep 1 2012 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics