Development of ZnO-InP heterojunction solar cells for thin film photovoltaics

Kyle H. Montgomery; Qiong Nian; Xin Zhao; Haoyu U. Li; Gary J. Cheng; Thomas Nelson Jackson; Jerry M. Woodall

doi:10.1109/PVSC.2014.6924974

Development of ZnO-InP heterojunction solar cells for thin film photovoltaics

Kyle H. Montgomery
, Qiong Nian
, Xin Zhao
, Haoyu U. Li
, Gary J. Cheng
, Thomas Nelson Jackson
, Jerry M. Woodall

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

As a photovoltaic material, InP is nearly ideal for a single junction solar cell in terms of its band gap and absorption coefficient. However, its widespread use is limited due to the expense of substrates and depositing monocrystalline material over large areas. As a route towards reducing the cost, there is interest in examining polycrystalline III-Vs, where film thicknesses ∼1 um could be employed, assuming a reflective back surface. This work examines one aspect towards delivering high efficiency polycrystalline InP-based solar cells by focusing on the use of low-cost, earth-abundant ZnO as the emitter layer. Due to surface Fermi-level pinning in InP, ZnO is an ideal choice for this purpose. We have studied the effects of using aluminum-doped zinc oxide, as well as thin i-ZnO interlayers, deposited onto p-type InP substrates. So far, a maximum power conversion efficiency of 7.3% has been realized, which is a record for this type of heterojunction cell structure. We further discuss the impact of the i-ZnO interlayer on enhancing short wavelength response in the cell.

Original language	English (US)
Title of host publication	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	524-527
Number of pages	4
ISBN (Electronic)	9781479943982
DOIs	https://doi.org/10.1109/PVSC.2014.6924974
State	Published - Oct 15 2014
Event	40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: Jun 8 2014 → Jun 13 2014

Publication series

Name	2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

Other

Other	40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Country/Territory	United States
City	Denver
Period	6/8/14 → 6/13/14

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2014.6924974

Cite this

Montgomery, K. H., Nian, Q., Zhao, X., Li, H. U., Cheng, G. J., Jackson, T. N., & Woodall, J. M. (2014). Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 524-527). Article 6924974 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6924974

@inproceedings{9e60a6f3001f4f0799f5966af271e584,

title = "Development of ZnO-InP heterojunction solar cells for thin film photovoltaics",

abstract = "As a photovoltaic material, InP is nearly ideal for a single junction solar cell in terms of its band gap and absorption coefficient. However, its widespread use is limited due to the expense of substrates and depositing monocrystalline material over large areas. As a route towards reducing the cost, there is interest in examining polycrystalline III-Vs, where film thicknesses ∼1 um could be employed, assuming a reflective back surface. This work examines one aspect towards delivering high efficiency polycrystalline InP-based solar cells by focusing on the use of low-cost, earth-abundant ZnO as the emitter layer. Due to surface Fermi-level pinning in InP, ZnO is an ideal choice for this purpose. We have studied the effects of using aluminum-doped zinc oxide, as well as thin i-ZnO interlayers, deposited onto p-type InP substrates. So far, a maximum power conversion efficiency of 7.3\% has been realized, which is a record for this type of heterojunction cell structure. We further discuss the impact of the i-ZnO interlayer on enhancing short wavelength response in the cell.",

author = "Montgomery, \{Kyle H.\} and Qiong Nian and Xin Zhao and Li, \{Haoyu U.\} and Cheng, \{Gary J.\} and Jackson, \{Thomas Nelson\} and Woodall, \{Jerry M.\}",

year = "2014",

month = oct,

day = "15",

doi = "10.1109/PVSC.2014.6924974",

language = "English (US)",

series = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "524--527",

booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",

address = "United States",

note = "40th IEEE Photovoltaic Specialist Conference, PVSC 2014 ; Conference date: 08-06-2014 Through 13-06-2014",

}

Montgomery, KH, Nian, Q, Zhao, X, Li, HU, Cheng, GJ, Jackson, TN & Woodall, JM 2014, Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6924974, 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 524-527, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6924974

Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. / Montgomery, Kyle H.; Nian, Qiong; Zhao, Xin et al.
2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 524-527 6924974 (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Development of ZnO-InP heterojunction solar cells for thin film photovoltaics

AU - Montgomery, Kyle H.

AU - Nian, Qiong

AU - Zhao, Xin

AU - Li, Haoyu U.

AU - Cheng, Gary J.

AU - Jackson, Thomas Nelson

AU - Woodall, Jerry M.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - As a photovoltaic material, InP is nearly ideal for a single junction solar cell in terms of its band gap and absorption coefficient. However, its widespread use is limited due to the expense of substrates and depositing monocrystalline material over large areas. As a route towards reducing the cost, there is interest in examining polycrystalline III-Vs, where film thicknesses ∼1 um could be employed, assuming a reflective back surface. This work examines one aspect towards delivering high efficiency polycrystalline InP-based solar cells by focusing on the use of low-cost, earth-abundant ZnO as the emitter layer. Due to surface Fermi-level pinning in InP, ZnO is an ideal choice for this purpose. We have studied the effects of using aluminum-doped zinc oxide, as well as thin i-ZnO interlayers, deposited onto p-type InP substrates. So far, a maximum power conversion efficiency of 7.3% has been realized, which is a record for this type of heterojunction cell structure. We further discuss the impact of the i-ZnO interlayer on enhancing short wavelength response in the cell.

AB - As a photovoltaic material, InP is nearly ideal for a single junction solar cell in terms of its band gap and absorption coefficient. However, its widespread use is limited due to the expense of substrates and depositing monocrystalline material over large areas. As a route towards reducing the cost, there is interest in examining polycrystalline III-Vs, where film thicknesses ∼1 um could be employed, assuming a reflective back surface. This work examines one aspect towards delivering high efficiency polycrystalline InP-based solar cells by focusing on the use of low-cost, earth-abundant ZnO as the emitter layer. Due to surface Fermi-level pinning in InP, ZnO is an ideal choice for this purpose. We have studied the effects of using aluminum-doped zinc oxide, as well as thin i-ZnO interlayers, deposited onto p-type InP substrates. So far, a maximum power conversion efficiency of 7.3% has been realized, which is a record for this type of heterojunction cell structure. We further discuss the impact of the i-ZnO interlayer on enhancing short wavelength response in the cell.

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M3 - Conference contribution

AN - SCOPUS:84912098164

T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

SP - 524

EP - 527

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014

Y2 - 8 June 2014 through 13 June 2014

ER -

Montgomery KH, Nian Q, Zhao X, Li HU, Cheng GJ, Jackson TN et al. Development of ZnO-InP heterojunction solar cells for thin film photovoltaics. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 524-527. 6924974. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014). doi: 10.1109/PVSC.2014.6924974

Development of ZnO-InP heterojunction solar cells for thin film photovoltaics

Abstract

Publication series

Other

UN SDGs

All Science Journal Classification (ASJC) codes

Access to Document

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