@inproceedings{6134d4a1ddc54a069ef44fc507995018,
title = "Development toward wafer-scale graphene RF electronics",
abstract = "We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Siface SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 cm2 at room temperature and had mobility of ∼ 1500 cm2 V-1 s-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.",
author = "Moon, {J. S.} and D. Curtis and M. Hu and D. Wong and Campbell, {P. M.} and G. Jernigan and J. Tedesco and B. VanMil and R. Myers-Ward and Edd, {C. Y.} and Gaskill, {D. K.} and J. Robinson and M. Fanton and P. Asbeck",
year = "2009",
doi = "10.1149/1.3119525",
language = "English (US)",
isbn = "9781566777131",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "35--40",
booktitle = "ECS Transactions - Graphene and Emerging Materials for Post-CMOS Applications",
edition = "5",
note = "1st International Symposium on Emerging Materials for Post-CMOS Applications - 215th Meeting of the Electrochemical Society ; Conference date: 25-05-2009 Through 29-05-2009",
}