@inproceedings{52836d0870fa402a9bab95d216faca45,
title = "Development toward wafer-scale graphene RF electronics",
abstract = "We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500 cm2 V-1S-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.",
author = "Moon, {J. S.} and D. Curtis and M. Hu and D. Wong and Campbell, {P. M.} and G. Jernigan and J. Tedesco and B. VanMil and R. Myers-Ward and C. Eddy and Gaskill, {D. K.} and J. Robinson and M. Fanton and P. Asbeck",
year = "2010",
doi = "10.1109/SMIC.2010.5422991",
language = "English (US)",
isbn = "9781424454587",
series = "2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers",
pages = "1--3",
booktitle = "2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers",
note = "2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 ; Conference date: 11-01-2010 Through 13-01-2010",
}