Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

Vyshnavi Suntharalingam; Stephen J. Fonash; Osama O. Awadelkarim

Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

Vyshnavi Suntharalingam, Stephen J. Fonash, Osama O. Awadelkarim

Research output: Contribution to conference › Paper › peer-review

Abstract

Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs.

Original language	English (US)
Pages	115-117
Number of pages	3
State	Published - 1995
Event	Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs - Bethlehem, PA, USA Duration: Sep 25 1995 → Sep 26 1995

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Other	Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs
City	Bethlehem, PA, USA
Period	9/25/95 → 9/26/95

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations",

abstract = "Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs.",

author = "Vyshnavi Suntharalingam and Fonash, {Stephen J.} and Awadelkarim, {Osama O.}",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs ; Conference date: 25-09-1995 Through 26-09-1995",

year = "1995",

language = "English (US)",

pages = "115--117",

}

Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations. / Suntharalingam, Vyshnavi; Fonash, Stephen J.; Awadelkarim, Osama O.
1995. 115-117 Paper presented at Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs, Bethlehem, PA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

AU - Suntharalingam, Vyshnavi

AU - Fonash, Stephen J.

AU - Awadelkarim, Osama O.

PY - 1995

Y1 - 1995

N2 - Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs.

AB - Electrical stress testing of polysilicon TFTs is a very valuable tool for addressing concerns about device reliability and stability. We have examined two distinct bias stresses on ECR and RF hydrogenated polysilicon TFTs and have compared the degradation mechanisms in n- and p-channel devices. We present evidence that hydrogen motion can play a role in TFT response to these stresses and show that the response can be very different for n- and p-channel TFTs.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029498075&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0029498075

SP - 115

EP - 117

T2 - Proceedings of the 1995 2nd International Workshop on Active Liquid Crystal Displays, AMLCDs

Y2 - 25 September 1995 through 26 September 1995

ER -

Device degradation in n- and p-channel polysilicon TFTs as a function of different electrical stress configurations

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