Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering