Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires

Xi Zhang, Kok Keong Lew, Pramod Nimmatoori, Joan M. Redwing, Elizabeth C. Dickey

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63 Scopus citations


Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

Original languageEnglish (US)
Pages (from-to)3241-3245
Number of pages5
JournalNano letters
Issue number10
StatePublished - Oct 2007

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanical Engineering


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