Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires

Xi Zhang; Kok Keong Lew; Pramod Nimmatoori; Joan M. Redwing; Elizabeth C. Dickey

doi:10.1021/nl071132u

Diameter-dependent composition of vapor-liquid-solid grown S _i-xGe _x nanowires

Xi Zhang
, Kok Keong Lew
, Pramod Nimmatoori
, Joan M. Redwing
, Elizabeth C. Dickey

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

Diameter-dependent compositions of Sh _1-xGe _x nanowires grown by a vapor-liquid-solid mechanism using SiH ₄ and GeH ₄ precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si _1-xGe _x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si _1-xGe _x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

Original language	English (US)
Pages (from-to)	3241-3245
Number of pages	5
Journal	Nano letters
Volume	7
Issue number	10
DOIs	https://doi.org/10.1021/nl071132u
State	Published - Oct 2007

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl071132u

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title = "Diameter-dependent composition of vapor-liquid-solid grown S i-xGe x nanowires",

abstract = "Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below \textasciitilde{}50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.",

author = "Xi Zhang and Lew, \{Kok Keong\} and Pramod Nimmatoori and Redwing, \{Joan M.\} and Dickey, \{Elizabeth C.\}",

year = "2007",

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doi = "10.1021/nl071132u",

language = "English (US)",

volume = "7",

pages = "3241--3245",

journal = "Nano letters",

issn = "1530-6984",

publisher = "American Chemical Society",

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AU - Zhang, Xi

AU - Lew, Kok Keong

AU - Nimmatoori, Pramod

AU - Redwing, Joan M.

AU - Dickey, Elizabeth C.

PY - 2007/10

Y1 - 2007/10

N2 - Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

AB - Diameter-dependent compositions of Sh 1-xGe x nanowires grown by a vapor-liquid-solid mechanism using SiH 4 and GeH 4 precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si 1-xGe x nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below ~50 nm. The size-dependent nature of Ge concentration in Si 1-xGe x NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.

UR - https://www.scopus.com/pages/publications/36248930048

UR - https://www.scopus.com/pages/publications/36248930048#tab=citedBy

U2 - 10.1021/nl071132u

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SN - 1530-6984

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SP - 3241

EP - 3245

JO - Nano letters

JF - Nano letters

IS - 10

ER -

Diameter-dependent composition of vapor-liquid-solid grown S _i-xGe _x nanowires

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