Diameter dependent growth rate and interfacial abruptness in vapor-liquid-Solid Si/Si 1-xGe x heterostructure nanowires

Trevor E. Clark; Pramod Nimmatoori; Kok Keong Lew; Ling Pan; Joan M. Redwing; Elizabeth C. Dickey

doi:10.1021/nl072849k

Diameter dependent growth rate and interfacial abruptness in vapor-liquid-Solid Si/Si _1-xGe _x heterostructure nanowires

Trevor E. Clark, Pramod Nimmatoori, Kok Keong Lew, Ling Pan, Joan M. Redwing, Elizabeth C. Dickey

Research output: Contribution to journal › Article › peer-review

151 Scopus citations

Abstract

A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si _1-xGe _x axial heterostructure nanowires grown via Au-mediated low pressure CVO using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

Original language	English (US)
Pages (from-to)	1246-1252
Number of pages	7
Journal	Nano letters
Volume	8
Issue number	4
DOIs	https://doi.org/10.1021/nl072849k
State	Published - Apr 1 2008

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl072849k

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abstract = "A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1-xGe x axial heterostructure nanowires grown via Au-mediated low pressure CVO using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.",

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AU - Clark, Trevor E.

AU - Nimmatoori, Pramod

AU - Lew, Kok Keong

AU - Pan, Ling

AU - Redwing, Joan M.

AU - Dickey, Elizabeth C.

PY - 2008/4/1

Y1 - 2008/4/1

N2 - A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1-xGe x axial heterostructure nanowires grown via Au-mediated low pressure CVO using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

AB - A strong diameter dependence is observed in the interfacial abruptness and growth rates in Si/Si 1-xGe x axial heterostructure nanowires grown via Au-mediated low pressure CVO using silane and germane precursors. The growth of these nanowires has similarities to that of heterostructure thin films with similar compositional interfacial broadening, which increases with and is on the order with diameter. This broadening may reveal a fundamental challenge to fabrication of abrupt heterostructures via VLS growth.

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JO - Nano letters

JF - Nano letters

IS - 4

ER -

Diameter dependent growth rate and interfacial abruptness in vapor-liquid-Solid Si/Si _1-xGe _x heterostructure nanowires

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