TY - JOUR
T1 - Dielectric and ferroelectric properties of Ta-doped bismuth titanate
AU - Hong, S. H.
AU - Horn, J. A.
AU - Trolier-McKinstry, S.
AU - Messing, G. L.
N1 - Funding Information:
Financial support from the Defense Advanced Research Projects Agency on AFOSR F49620-94-1-0428 is gratefully acknowledged.
PY - 2000/9
Y1 - 2000/9
N2 - The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.
AB - The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.
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U2 - 10.1023/A:1006722312423
DO - 10.1023/A:1006722312423
M3 - Article
AN - SCOPUS:0034270668
SN - 0261-8028
VL - 19
SP - 1661
EP - 1664
JO - Journal of Materials Science Letters
JF - Journal of Materials Science Letters
IS - 18
ER -