Dielectric and ferroelectric properties of Ta-doped bismuth titanate

S. H. Hong; J. A. Horn; S. Trolier-McKinstry; G. L. Messing

doi:10.1023/A:1006722312423

Dielectric and ferroelectric properties of Ta-doped bismuth titanate

S. H. Hong
, J. A. Horn
, S. Trolier-McKinstry
, G. L. Messing

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.

Original language	English (US)
Pages (from-to)	1661-1664
Number of pages	4
Journal	Journal of Materials Science Letters
Volume	19
Issue number	18
DOIs	https://doi.org/10.1023/A:1006722312423
State	Published - Sep 2000

All Science Journal Classification (ASJC) codes

General Materials Science

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10.1023/A:1006722312423

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title = "Dielectric and ferroelectric properties of Ta-doped bismuth titanate",

abstract = "The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.",

author = "Hong, \{S. H.\} and Horn, \{J. A.\} and S. Trolier-McKinstry and Messing, \{G. L.\}",

note = "Funding Information: Financial support from the Defense Advanced Research Projects Agency on AFOSR F49620-94-1-0428 is gratefully acknowledged.",

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T1 - Dielectric and ferroelectric properties of Ta-doped bismuth titanate

AU - Hong, S. H.

AU - Horn, J. A.

AU - Trolier-McKinstry, S.

AU - Messing, G. L.

N1 - Funding Information: Financial support from the Defense Advanced Research Projects Agency on AFOSR F49620-94-1-0428 is gratefully acknowledged.

PY - 2000/9

Y1 - 2000/9

N2 - The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.

AB - The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.

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UR - https://www.scopus.com/pages/publications/0034270668#tab=citedBy

U2 - 10.1023/A:1006722312423

DO - 10.1023/A:1006722312423

M3 - Article

AN - SCOPUS:0034270668

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SP - 1661

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JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

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ER -

Dielectric and ferroelectric properties of Ta-doped bismuth titanate

Abstract

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