Dielectric and microstructural properties of barium titanate hafnate thin films

Jon F. Ihlefeld; William J. Borland; Jon Paul Maria

doi:10.1016/j.tsf.2007.08.096

Dielectric and microstructural properties of barium titanate hafnate thin films

Jon F. Ihlefeld, William J. Borland, Jon Paul Maria

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Barium titanate hafnate (BaTi_1-xHf_xO₃, 0 ≤ x ≤ 0.25) thin films have been deposited by a chemical solution method on copper foil substrates. The films were crystallized at 900 °C and in a reducing atmosphere to prevent substrate oxidation. Perovskite phase formation was identified for each composition, accompanied by an increased pseudocubic lattice parameter. Temperature dependent dielectric measurements revealed a decreasing phase transition temperature and peak permittivity with increasing hafnium level. The decrease in permittivity resulted from grain size reduction with increasing hafnium content. Compositions containing 25 mol% barium hafnate display a deviation from Curie-Weiss behavior indicating the onset of relaxor behavior.

Original language	English (US)
Pages (from-to)	3162-3166
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	10
DOIs	https://doi.org/10.1016/j.tsf.2007.08.096
State	Published - Mar 31 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2007.08.096

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abstract = "Barium titanate hafnate (BaTi1-xHfxO3, 0 ≤ x ≤ 0.25) thin films have been deposited by a chemical solution method on copper foil substrates. The films were crystallized at 900 °C and in a reducing atmosphere to prevent substrate oxidation. Perovskite phase formation was identified for each composition, accompanied by an increased pseudocubic lattice parameter. Temperature dependent dielectric measurements revealed a decreasing phase transition temperature and peak permittivity with increasing hafnium level. The decrease in permittivity resulted from grain size reduction with increasing hafnium content. Compositions containing 25 mol% barium hafnate display a deviation from Curie-Weiss behavior indicating the onset of relaxor behavior.",

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AU - Ihlefeld, Jon F.

AU - Borland, William J.

AU - Maria, Jon Paul

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Y1 - 2008/3/31

N2 - Barium titanate hafnate (BaTi1-xHfxO3, 0 ≤ x ≤ 0.25) thin films have been deposited by a chemical solution method on copper foil substrates. The films were crystallized at 900 °C and in a reducing atmosphere to prevent substrate oxidation. Perovskite phase formation was identified for each composition, accompanied by an increased pseudocubic lattice parameter. Temperature dependent dielectric measurements revealed a decreasing phase transition temperature and peak permittivity with increasing hafnium level. The decrease in permittivity resulted from grain size reduction with increasing hafnium content. Compositions containing 25 mol% barium hafnate display a deviation from Curie-Weiss behavior indicating the onset of relaxor behavior.

AB - Barium titanate hafnate (BaTi1-xHfxO3, 0 ≤ x ≤ 0.25) thin films have been deposited by a chemical solution method on copper foil substrates. The films were crystallized at 900 °C and in a reducing atmosphere to prevent substrate oxidation. Perovskite phase formation was identified for each composition, accompanied by an increased pseudocubic lattice parameter. Temperature dependent dielectric measurements revealed a decreasing phase transition temperature and peak permittivity with increasing hafnium level. The decrease in permittivity resulted from grain size reduction with increasing hafnium content. Compositions containing 25 mol% barium hafnate display a deviation from Curie-Weiss behavior indicating the onset of relaxor behavior.

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Dielectric and microstructural properties of barium titanate hafnate thin films

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