TY - JOUR
T1 - Dielectric and microstructural properties of barium titanate zirconate thin films on copper substrates
AU - Ihlefeld, J. F.
AU - Maria, J. P.
AU - Borland, W.
N1 - Funding Information:
The authors would like to acknowledge the support of Dupont Electronic Technologies, Research Triangle Park, North Carolina.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2005/10
Y1 - 2005/10
N2 - Barium titanate zirconate, Ba(Ti1-x Zrx)O3(0 ≤ × ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900 °C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol% BaZrO3, the permittivity below Tmax became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti1-x Zrx)O3 was studied at room temperature and at Tmax for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at Tmax and all compositions showed an increase in permittivity.
AB - Barium titanate zirconate, Ba(Ti1-x Zrx)O3(0 ≤ × ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) method directly on copper foils. The films were processed in a reductive atmosphere containing nitrogen, water vapor, and hydrogen gas at 900 °C to preserve the metallic copper substrate during crystallization. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. The decrease in the relative permittivity was attributed to a grain size effect as opposed to zirconium substitution. In film compositions containing 25 mol% BaZrO3, the permittivity below Tmax became dispersive, and the ferroelectric transitions became increasingly diffuse. These characteristics suggest relaxor-like behavior. The dielectric tunability of Ba(Ti1-x Zrx)O3 was studied at room temperature and at Tmax for each composition. There was little variation in the tunability with measurement temperature; however compositions that were ferroelectric at room temperature saw a decrease in hysteresis at Tmax and all compositions showed an increase in permittivity.
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U2 - 10.1557/JMR.2005.0342
DO - 10.1557/JMR.2005.0342
M3 - Article
AN - SCOPUS:29144455358
SN - 0884-2914
VL - 20
SP - 2838
EP - 2844
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 10
ER -