TY - GEN
T1 - Dielectric and microstructural properties of Ba(Ti1-xZr x)O3 thin films on copper substrates
AU - Ihlefeld, J. F.
AU - Maria, J. P.
AU - Borland, W.
PY - 2005
Y1 - 2005
N2 - Barium titanate zirconate, Ba(Ti1-xZrx)O3 (0 ≤ x ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) process directly on copper foils. The films were processed in a reductive atmosphere containing water vapor and hydrogen gas at 900°C in order to preserve the metallic copper substrate while crystallizing the film into a perovskite structure. The microstructure and phase transition phenomena of films were studied utilizing x-ray diffraction, atomic force microscopy, and the temperature dependence of the dielectric constant and loss tangent. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. Films were analyzed for dispersion in the transition temperature with frequency. Results indicated that films containing 25 mol% BaZrO3 demonstrate a shift in the temperature of the ferroelectric phase transition with increasing measurement frequency. This shift, combined with the dispersive nature of the transition, suggests that films of this composition are of the relaxor ferroelectric family. The ability to process high permittivity thin film materials directly on inexpensive copper substrates has strong technological implications toward embedded passives and efficient frequency agile devices.
AB - Barium titanate zirconate, Ba(Ti1-xZrx)O3 (0 ≤ x ≤ 0.25), thin films were deposited via the chemical solution deposition (CSD) process directly on copper foils. The films were processed in a reductive atmosphere containing water vapor and hydrogen gas at 900°C in order to preserve the metallic copper substrate while crystallizing the film into a perovskite structure. The microstructure and phase transition phenomena of films were studied utilizing x-ray diffraction, atomic force microscopy, and the temperature dependence of the dielectric constant and loss tangent. Increasing the fraction of BaZrO3 revealed several effects, including an increase in unit cell dimensions, a decrease in both the temperature and value of the maximum permittivity, as well as a decrease in the average grain size of the films. Films were analyzed for dispersion in the transition temperature with frequency. Results indicated that films containing 25 mol% BaZrO3 demonstrate a shift in the temperature of the ferroelectric phase transition with increasing measurement frequency. This shift, combined with the dispersive nature of the transition, suggests that films of this composition are of the relaxor ferroelectric family. The ability to process high permittivity thin film materials directly on inexpensive copper substrates has strong technological implications toward embedded passives and efficient frequency agile devices.
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U2 - 10.1002/9780470291252.ch11
DO - 10.1002/9780470291252.ch11
M3 - Conference contribution
AN - SCOPUS:32044471625
SN - 9781119040439
T3 - Ceramic Engineering and Science Proceedings
SP - 109
EP - 116
BT - Advances in Electronic Ceramic Materials. A Collection of papers Presented at the 29th International Conference on Advanced Ceramics and Composites
PB - American Ceramic Society
T2 - 29th International Conference on Advanced Ceramics and Composites
Y2 - 23 January 2005 through 28 January 2005
ER -