Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO 3-based thin films

M. Abazari; A. Safari; S. S.N. Bharadwaja; S. Trolier-Mckinstry

doi:10.1063/1.3309706

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO ₃-based thin films

M. Abazari, A. Safari, S. S.N. Bharadwaja, S. Trolier-Mckinstry

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108 Scopus citations

Abstract

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO₃-(Bi,K)TiO₃-BaTiO₃ epitaxial thin films deposited on SrRuO₃ coated SrTiO₃ substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm² with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e_31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/ m². The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

Original language	English (US)
Article number	082903
Journal	Applied Physics Letters
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.3309706
State	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3309706

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@article{a0934f0fb93148bdb29ae88fc26776f3,

title = "Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO 3-based thin films",

abstract = "Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/ m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.",

author = "M. Abazari and A. Safari and Bharadwaja, {S. S.N.} and S. Trolier-Mckinstry",

note = "Funding Information: The authors would like to acknowledge the Glenn Howatt foundation for their financial support.",

year = "2010",

doi = "10.1063/1.3309706",

language = "English (US)",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO 3-based thin films

AU - Abazari, M.

AU - Safari, A.

AU - Bharadwaja, S. S.N.

AU - Trolier-Mckinstry, S.

N1 - Funding Information: The authors would like to acknowledge the Glenn Howatt foundation for their financial support.

PY - 2010

Y1 - 2010

N2 - Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/ m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

AB - Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/ m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

UR - http://www.scopus.com/inward/record.url?scp=77749254842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77749254842&partnerID=8YFLogxK

U2 - 10.1063/1.3309706

DO - 10.1063/1.3309706

M3 - Article

AN - SCOPUS:77749254842

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082903

ER -

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO ₃-based thin films

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