TY - JOUR
T1 - Dielectric and piezoelectric properties of perovskite materials at cryogenic temperatures
AU - Paik, D. S.
AU - Park, S. E.
AU - Shrout, T. R.
AU - Hackenberger, W.
N1 - Funding Information:
This research has been supported by NASA (contract No. NASA-97097).
PY - 1999
Y1 - 1999
N2 - Dielectric and piezoelectric properties of perovskite materials including La modified Pb(Zr, Ti)O3 (PZT's), (Ba, Sr)TiO3 (BST) polycrystalline ceramics and Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) single crystals were investigated for capacitor and actuator applications at cryogenic temperatures. PZTs were compositionally engineered to have decreased Curie temperatures (Tc) by La and Sn doping in order to compensate for the loss of extrinsic contributions to piezoelectricity at cryogenic temperatures. Enhanced extrinsic contributions resulted in piezoelectric coefficients (d33) as high as 250 pC/N at 30 K, superior to that of conventional DOD Type PZT's (d33 approx. 100 pC/N). This property enhancement was associated with returning to the MPB at cryogenic temperatures. 5/95 BST with a dielectric maximum at 57 K was investigated to obtain high electrostrictive properties or E-field induced piezoelectricity. Coupling coefficients (k31) approx. 25% comparable to those of the cryogenic PLZT piezoelectrics were observed at d.c. bias of 1.5 kV/cm and 50 K. Though significantly lower than the room temperature values, PZN-PT rhombohedral single crystals exhibited d33 > 500 pC/N at 30 K.
AB - Dielectric and piezoelectric properties of perovskite materials including La modified Pb(Zr, Ti)O3 (PZT's), (Ba, Sr)TiO3 (BST) polycrystalline ceramics and Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) single crystals were investigated for capacitor and actuator applications at cryogenic temperatures. PZTs were compositionally engineered to have decreased Curie temperatures (Tc) by La and Sn doping in order to compensate for the loss of extrinsic contributions to piezoelectricity at cryogenic temperatures. Enhanced extrinsic contributions resulted in piezoelectric coefficients (d33) as high as 250 pC/N at 30 K, superior to that of conventional DOD Type PZT's (d33 approx. 100 pC/N). This property enhancement was associated with returning to the MPB at cryogenic temperatures. 5/95 BST with a dielectric maximum at 57 K was investigated to obtain high electrostrictive properties or E-field induced piezoelectricity. Coupling coefficients (k31) approx. 25% comparable to those of the cryogenic PLZT piezoelectrics were observed at d.c. bias of 1.5 kV/cm and 50 K. Though significantly lower than the room temperature values, PZN-PT rhombohedral single crystals exhibited d33 > 500 pC/N at 30 K.
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U2 - 10.1023/A:1004578225228
DO - 10.1023/A:1004578225228
M3 - Article
AN - SCOPUS:0032629152
SN - 0022-2461
VL - 34
SP - 469
EP - 473
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 3
ER -