Dielectric and piezoelectric properties of PZT 52/48 thick films with (100) and random crystallorgraphic orientation

Q. F. Zhou; E. Hong; R. Wolf; S. Trolier-McKinstry

Dielectric and piezoelectric properties of PZT 52/48 thick films with (100) and random crystallorgraphic orientation

Q. F. Zhou, E. Hong, R. Wolf, S. Trolier-McKinstry

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Abstract

Ferroelectric Pb(Zr_1-xTi_x)O₃ (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of cristallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr_0.52Ti_0.48)O₃ (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to - 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO₂/Si and Pt(100)/SiO₂/Si substrates, respectively. The dielectric permittivity (at 1 kHz) for the (100) oriented films was 980-1000, and for the random films ∼930-950. In both cases, tanδ was less than 0.03. The remanent polarization (∼ 30 μC/cm²) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d_31(eff)) of PZT films was measured by the wafer flexure method. The d_31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.

Original language	English (US)
Pages (from-to)	XCIX-XC
Journal	Materials Research Society Symposium - Proceedings
Volume	655
State	Published - 2001

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Dielectric and piezoelectric properties of PZT 52/48 thick films with (100) and random crystallorgraphic orientation",

abstract = "Ferroelectric Pb(Zr1-xTix)O3 (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of cristallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to - 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO2/Si and Pt(100)/SiO2/Si substrates, respectively. The dielectric permittivity (at 1 kHz) for the (100) oriented films was 980-1000, and for the random films ∼930-950. In both cases, tanδ was less than 0.03. The remanent polarization (∼ 30 μC/cm2) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d31(eff)) of PZT films was measured by the wafer flexure method. The d31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.",

author = "Zhou, {Q. F.} and E. Hong and R. Wolf and S. Trolier-McKinstry",

year = "2001",

language = "English (US)",

volume = "655",

pages = "XCIX--XC",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Dielectric and piezoelectric properties of PZT 52/48 thick films with (100) and random crystallorgraphic orientation

AU - Zhou, Q. F.

AU - Hong, E.

AU - Wolf, R.

AU - Trolier-McKinstry, S.

PY - 2001

Y1 - 2001

N2 - Ferroelectric Pb(Zr1-xTix)O3 (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of cristallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to - 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO2/Si and Pt(100)/SiO2/Si substrates, respectively. The dielectric permittivity (at 1 kHz) for the (100) oriented films was 980-1000, and for the random films ∼930-950. In both cases, tanδ was less than 0.03. The remanent polarization (∼ 30 μC/cm2) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d31(eff)) of PZT films was measured by the wafer flexure method. The d31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.

AB - Ferroelectric Pb(Zr1-xTix)O3 (PZT) films have been extensively studied for active components in microelectromechanical systems. The properties of PZT films depend on many parameters, including composition, orientation, film thickness and microstructure. In this study, the effects of cristallographic orientation on the dielectric and transverse piezoelectric properties of Pb(Zr0.52Ti0.48)O3 (PZT 52/48) films are reported. Crack free random and highly (100) oriented PZT(52/48) films up to - 7 μm thick were deposited using a sol-gel process on Pt (111)/Ti/SiO2/Si and Pt(100)/SiO2/Si substrates, respectively. The dielectric permittivity (at 1 kHz) for the (100) oriented films was 980-1000, and for the random films ∼930-950. In both cases, tanδ was less than 0.03. The remanent polarization (∼ 30 μC/cm2) of random PZT films was larger than that of (100) oriented PZT films. The transverse piezoelectric coefficient (d31(eff)) of PZT films was measured by the wafer flexure method. The d31(eff) coefficient of random PZT thick films (-80pC/N) was larger than that of (100) oriented films (-60pC/N) when poled at 80 kV/cm for 15 min.

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Dielectric and piezoelectric properties of PZT 52/48 thick films with (100) and random crystallorgraphic orientation

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