Dielectric anomalies in [111] oriented 0.955Pb(Zn _1/3Nb _2/3)O ₃-0.045PbTiO ₃ single crystals under different electrical and thermal conditions

The dielectric anomalies in [111] oriented PZN-4.5%PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.