The dielectric anomalies in  oriented PZN-4.5%PT single crystals induced by different levels of bias electrical field during temperature variations, were investigated. The crystals used in the experiments were grown using the high temperature flux method. The electric field-temperature diagrams of the anomalies were developed under three different schemes of changing the temperature and bias field. The results show that the application of a direct current electrical field induced dielectric anomalies to occur at specific temperatures, which can be explained by the structural phase transitions.
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy