Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films

Jungho Ryu; Chee Sung Park; Jong Jin Choi; Byung Dong Hahn; Woon Ha Yoon; Byoung Kuk Lee; Dong Soo Park; Shashank Priya; Kun Young Kim; Chan Park

doi:10.1080/09500830903236012

Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films

Jungho Ryu, Chee Sung Park, Jong Jin Choi, Byung Dong Hahn, Woon Ha Yoon, Byoung Kuk Lee, Dong Soo Park, Shashank Priya, Kun Young Kim, Chan Park

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.

Original language	English (US)
Pages (from-to)	665-672
Number of pages	8
Journal	Philosophical Magazine Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1080/09500830903236012
State	Published - Nov 2009

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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@article{d3f02f60b24241e38face6163388f913,

title = "Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films",

abstract = "We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.",

author = "Jungho Ryu and Park, {Chee Sung} and Choi, {Jong Jin} and Hahn, {Byung Dong} and Yoon, {Woon Ha} and Lee, {Byoung Kuk} and Park, {Dong Soo} and Shashank Priya and Kim, {Kun Young} and Chan Park",

note = "Funding Information: This work was financially supported by the Ministry of Knowledge Economy, Republic of Korea, through the Component-Material development program, Army Research Office USA (47576MS) and by the Office of Basic Energy Science, Department of Energy, USA (DE-FG02-08ER46 484).",

year = "2009",

month = nov,

doi = "10.1080/09500830903236012",

language = "English (US)",

volume = "89",

pages = "665--672",

journal = "Philosophical Magazine Letters",

issn = "0950-0839",

publisher = "Taylor and Francis Ltd.",

number = "11",

}

TY - JOUR

T1 - Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films

AU - Ryu, Jungho

AU - Park, Chee Sung

AU - Choi, Jong Jin

AU - Hahn, Byung Dong

AU - Yoon, Woon Ha

AU - Lee, Byoung Kuk

AU - Park, Dong Soo

AU - Priya, Shashank

AU - Kim, Kun Young

AU - Park, Chan

N1 - Funding Information: This work was financially supported by the Ministry of Knowledge Economy, Republic of Korea, through the Component-Material development program, Army Research Office USA (47576MS) and by the Office of Basic Energy Science, Department of Energy, USA (DE-FG02-08ER46 484).

PY - 2009/11

Y1 - 2009/11

N2 - We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.

AB - We report the dielectric and ferroelectric behavior of thick films, 10 m, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3)O3 (PZT-PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3-0.1Pb(Zn1/3Nb2/3) O3-0.52 wt% MnO2 (PZT-PZN-Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.

UR - http://www.scopus.com/inward/record.url?scp=74949137038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74949137038&partnerID=8YFLogxK

U2 - 10.1080/09500830903236012

DO - 10.1080/09500830903236012

M3 - Article

AN - SCOPUS:74949137038

SN - 0950-0839

VL - 89

SP - 665

EP - 672

JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

IS - 11

ER -

Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films

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