TY - JOUR
T1 - Dielectric behavior of bilayer films of P(VDF-CTFE) and low temperature PECVD fabricated Si3N4
AU - Zhou, Xin
AU - Chen, Qin
AU - Zhang, Q. M.
AU - Zhang, Shihai
N1 - Funding Information:
This work was supported by ONR under Grant No. N00014-08-1-0229 and ONR MURI Grant No. N00014-05-1-0541.
PY - 2011/4
Y1 - 2011/4
N2 - We report the investigation of a bilayer approach to reduce the loss, especially the conduction loss at high electric fields, in the poly(vinylidene fluoride - chlorotrifluoroethylene) P(VDF-CTFE) films which exhibit high discharged energy density. There are many challenges for another dielectric layer used in the bilayer to block the conduction loss, including not only low dielectric loss and high resistivity, but also matched dielectric constant to and compatible film fabrication condition with the P(VDF-CTFE) films. We show that Si3N4 films, which can be synthesized by the plasma enhanced chemical vapor deposition (PECVD) at 100°C and thus will not cause damage to the P(VDF-CTFE) films, can meet these challenges. Experimental results show that with a proper low temperature PECVD deposition, the Si 3N4 films display a dielectric constant ∼ 7 with a low dielectric loss (> 700 MV/m). Consequently, the bilayer films of Si 3N4/P(VDF-CTFE) exhibit a high energy density (> 10 J/cm3 at fields higher than 435 MV/m) with significantly reduced losses.
AB - We report the investigation of a bilayer approach to reduce the loss, especially the conduction loss at high electric fields, in the poly(vinylidene fluoride - chlorotrifluoroethylene) P(VDF-CTFE) films which exhibit high discharged energy density. There are many challenges for another dielectric layer used in the bilayer to block the conduction loss, including not only low dielectric loss and high resistivity, but also matched dielectric constant to and compatible film fabrication condition with the P(VDF-CTFE) films. We show that Si3N4 films, which can be synthesized by the plasma enhanced chemical vapor deposition (PECVD) at 100°C and thus will not cause damage to the P(VDF-CTFE) films, can meet these challenges. Experimental results show that with a proper low temperature PECVD deposition, the Si 3N4 films display a dielectric constant ∼ 7 with a low dielectric loss (> 700 MV/m). Consequently, the bilayer films of Si 3N4/P(VDF-CTFE) exhibit a high energy density (> 10 J/cm3 at fields higher than 435 MV/m) with significantly reduced losses.
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U2 - 10.1109/TDEI.2011.5739450
DO - 10.1109/TDEI.2011.5739450
M3 - Article
AN - SCOPUS:79953662877
SN - 1070-9878
VL - 18
SP - 463
EP - 470
JO - IEEE Transactions on Dielectrics and Electrical Insulation
JF - IEEE Transactions on Dielectrics and Electrical Insulation
IS - 2
M1 - 5739450
ER -