TY - GEN
T1 - Dielectric constant and loss tangent characterization of thin high-K dielectrics using corner-to-corner plane probing
AU - Engin, A. Ege
AU - Tambawala, Abdemanaf
AU - Swaminathan, Madhavan
AU - Bhattacharya, Swapan
AU - Pramanik, Pranabes
AU - Yamazaki, Kazuhiro
PY - 2006
Y1 - 2006
N2 - Thin dielectrics with a high dielectric constant are very attractive for improving the decoupling performance of digital and mixed-signal systems. Accurate estimation of the dielectric constant and the loss tangent is important to calculate the impedance profile or the cavity resonances. Extracting the electrical properties of thin and high-K dielectrics is difficult using conventional methods such as microstrip or ring resonators with gaps, as the coupling through the gap becomes very small for an accurate measurement. We present a method to extract the frequency-dependent dielectric constant and loss tangent of such materials using rectangular power/ground planes. We have also developed a rapid plane solver for fast extraction of material properties from such measurements. We applied this rapid solver method to characterize a thin high-K material, but we believe it can be used for thick or low-K materials as well.
AB - Thin dielectrics with a high dielectric constant are very attractive for improving the decoupling performance of digital and mixed-signal systems. Accurate estimation of the dielectric constant and the loss tangent is important to calculate the impedance profile or the cavity resonances. Extracting the electrical properties of thin and high-K dielectrics is difficult using conventional methods such as microstrip or ring resonators with gaps, as the coupling through the gap becomes very small for an accurate measurement. We present a method to extract the frequency-dependent dielectric constant and loss tangent of such materials using rectangular power/ground planes. We have also developed a rapid plane solver for fast extraction of material properties from such measurements. We applied this rapid solver method to characterize a thin high-K material, but we believe it can be used for thick or low-K materials as well.
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U2 - 10.1109/EPEP.2006.321182
DO - 10.1109/EPEP.2006.321182
M3 - Conference contribution
AN - SCOPUS:35348832677
SN - 1424406684
SN - 9781424406685
T3 - Electrical Performance of Electronic Packaging, EPEP
SP - 29
EP - 32
BT - Electrical Performance of Electronic Packaging, EPEP
T2 - 14th Topical Meeting on Electrical Performance of Electronic Packaging, EPEP
Y2 - 23 October 2006 through 25 October 2006
ER -