Dielectric constant measurement of thin films using goniometric terahertz time-domain spectroscopy

Ming Li; Jeffery Fortin; Jin Y. Kim; G. Fox; F. Chu; T. Davenport; Toh Ming Lu; Xi Cheng Zhang

doi:10.1109/2944.974234

Dielectric constant measurement of thin films using goniometric terahertz time-domain spectroscopy

Ming Li, Jeffery Fortin, Jin Y. Kim, G. Fox, F. Chu, T. Davenport, Toh Ming Lu, Xi Cheng Zhang

Office of the Senior Vice President for Research

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a θ-2θ goniometer. A silicon wafer was analyzed as the reference substrate material. A sharp π phase-shift of the reflected EM wave was observed at the Brewster angle of 73.5° for a bare silicon wafer. The phase shift for a film on the Si substrate is relatively smooth due to its two surfaces' providing a complex reflectance. The dielectric constant of the film on Si, related with angular dependency of the phase shift, can be extracted by means of fitting the curve or measuring slope of the curve near the Brewster angle. The measured dielectric constants of FLARE, TiO_x, and PZT film are reported.

Original language	English (US)
Pages (from-to)	624-629
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	7
Issue number	4
DOIs	https://doi.org/10.1109/2944.974234
State	Published - Jul 2001

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/2944.974234

Cite this

@article{428b58acf9f044d49a6b233cb61f4155,

title = "Dielectric constant measurement of thin films using goniometric terahertz time-domain spectroscopy",

abstract = "Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a θ-2θ goniometer. A silicon wafer was analyzed as the reference substrate material. A sharp π phase-shift of the reflected EM wave was observed at the Brewster angle of 73.5° for a bare silicon wafer. The phase shift for a film on the Si substrate is relatively smooth due to its two surfaces' providing a complex reflectance. The dielectric constant of the film on Si, related with angular dependency of the phase shift, can be extracted by means of fitting the curve or measuring slope of the curve near the Brewster angle. The measured dielectric constants of FLARE, TiOx, and PZT film are reported.",

author = "Ming Li and Jeffery Fortin and Kim, {Jin Y.} and G. Fox and F. Chu and T. Davenport and Lu, {Toh Ming} and Zhang, {Xi Cheng}",

note = "Funding Information: Manuscript received January 25, 2001; revised May 2, 2001. This work was supported by the Semiconductor Research Corporation, Durham, NC. M. Li was with the Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180 USA. He is now with Applied Materials, Inc., Santa Clara, CA 95014 USA. M. Li, J. Fortin, J. Y. Kim, T.-M. Lu, and X.-C. Zhang are with the Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180 USA. G. Fox, F. Chu, and T. Davenport are with the Ramtron International Corporation, Colorado Springs, CO 80925 USA. Publisher Item Identifier S 1077-260X(01)09938-5.",

year = "2001",

month = jul,

doi = "10.1109/2944.974234",

language = "English (US)",

volume = "7",

pages = "624--629",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Dielectric constant measurement of thin films using goniometric terahertz time-domain spectroscopy

AU - Li, Ming

AU - Fortin, Jeffery

AU - Kim, Jin Y.

AU - Fox, G.

AU - Chu, F.

AU - Davenport, T.

AU - Lu, Toh Ming

AU - Zhang, Xi Cheng

N1 - Funding Information: Manuscript received January 25, 2001; revised May 2, 2001. This work was supported by the Semiconductor Research Corporation, Durham, NC. M. Li was with the Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180 USA. He is now with Applied Materials, Inc., Santa Clara, CA 95014 USA. M. Li, J. Fortin, J. Y. Kim, T.-M. Lu, and X.-C. Zhang are with the Physics Department, Rensselaer Polytechnic Institute, Troy, NY 12180 USA. G. Fox, F. Chu, and T. Davenport are with the Ramtron International Corporation, Colorado Springs, CO 80925 USA. Publisher Item Identifier S 1077-260X(01)09938-5.

PY - 2001/7

Y1 - 2001/7

N2 - Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a θ-2θ goniometer. A silicon wafer was analyzed as the reference substrate material. A sharp π phase-shift of the reflected EM wave was observed at the Brewster angle of 73.5° for a bare silicon wafer. The phase shift for a film on the Si substrate is relatively smooth due to its two surfaces' providing a complex reflectance. The dielectric constant of the film on Si, related with angular dependency of the phase shift, can be extracted by means of fitting the curve or measuring slope of the curve near the Brewster angle. The measured dielectric constants of FLARE, TiOx, and PZT film are reported.

AB - Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a θ-2θ goniometer. A silicon wafer was analyzed as the reference substrate material. A sharp π phase-shift of the reflected EM wave was observed at the Brewster angle of 73.5° for a bare silicon wafer. The phase shift for a film on the Si substrate is relatively smooth due to its two surfaces' providing a complex reflectance. The dielectric constant of the film on Si, related with angular dependency of the phase shift, can be extracted by means of fitting the curve or measuring slope of the curve near the Brewster angle. The measured dielectric constants of FLARE, TiOx, and PZT film are reported.

UR - http://www.scopus.com/inward/record.url?scp=0035410142&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035410142&partnerID=8YFLogxK

U2 - 10.1109/2944.974234

DO - 10.1109/2944.974234

M3 - Article

AN - SCOPUS:0035410142

SN - 1077-260X

VL - 7

SP - 624

EP - 629

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 4

ER -

Dielectric constant measurement of thin films using goniometric terahertz time-domain spectroscopy

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this