Dielectric enhancement in interface-modified BaTiO3/SrTiO 3 multilayered films prepared by pulsed laser deposition

Dazhi Hu; Mingrong Shen; Wenwu Cao

doi:10.1016/j.mee.2005.12.007

Dielectric enhancement in interface-modified BaTiO₃/SrTiO ₃ multilayered films prepared by pulsed laser deposition

Dazhi Hu, Mingrong Shen, Wenwu Cao

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Pulsed-laser-deposited polycrystalline BaTiO₃/SrTiO₃ multilayered films on Pt/Ti/SiO₂/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10 KHz. This is about two times that of the identically prepared Ba_0.5Sr_0.5TiO₃/Ba _0.5Sr_0.5TiO₃ homolayered and uniform Ba _0.5Sr_0.5TiO₃ films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure.

Original language	English (US)
Pages (from-to)	553-556
Number of pages	4
Journal	Microelectronic Engineering
Volume	83
Issue number	3
DOIs	https://doi.org/10.1016/j.mee.2005.12.007
State	Published - Mar 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2005.12.007

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title = "Dielectric enhancement in interface-modified BaTiO3/SrTiO 3 multilayered films prepared by pulsed laser deposition",

abstract = "Pulsed-laser-deposited polycrystalline BaTiO3/SrTiO3 multilayered films on Pt/Ti/SiO2/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10 KHz. This is about two times that of the identically prepared Ba0.5Sr0.5TiO3/Ba 0.5Sr0.5TiO3 homolayered and uniform Ba 0.5Sr0.5TiO3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure.",

author = "Dazhi Hu and Mingrong Shen and Wenwu Cao",

note = "Funding Information: This research was sponsored by Natural Science Foundation of China (Grant No. 10204016).",

year = "2006",

month = mar,

doi = "10.1016/j.mee.2005.12.007",

language = "English (US)",

volume = "83",

pages = "553--556",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Dielectric enhancement in interface-modified BaTiO3/SrTiO 3 multilayered films prepared by pulsed laser deposition

AU - Hu, Dazhi

AU - Shen, Mingrong

AU - Cao, Wenwu

N1 - Funding Information: This research was sponsored by Natural Science Foundation of China (Grant No. 10204016).

PY - 2006/3

Y1 - 2006/3

N2 - Pulsed-laser-deposited polycrystalline BaTiO3/SrTiO3 multilayered films on Pt/Ti/SiO2/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10 KHz. This is about two times that of the identically prepared Ba0.5Sr0.5TiO3/Ba 0.5Sr0.5TiO3 homolayered and uniform Ba 0.5Sr0.5TiO3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure.

AB - Pulsed-laser-deposited polycrystalline BaTiO3/SrTiO3 multilayered films on Pt/Ti/SiO2/Si substrates have been fabricated with interfacial modification through lowering the oxygen pressure during the time interval in between two adjacent depositions. It is found that the formation of the heterolayered structure is essential to get the dielectric enhancement. Such heterolayered films have large dielectric constant of 1201 with a loss tangent below 0.1 at 10 KHz. This is about two times that of the identically prepared Ba0.5Sr0.5TiO3/Ba 0.5Sr0.5TiO3 homolayered and uniform Ba 0.5Sr0.5TiO3 films. The enhancement of dielectric properties is attributed to the presence of the interfacial regions with controllable space charges due to the formation of oxygen vacancies at lower oxygen pressure.

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DO - 10.1016/j.mee.2005.12.007

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

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ER -

Dielectric enhancement in interface-modified BaTiO₃/SrTiO ₃ multilayered films prepared by pulsed laser deposition

Abstract

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