Dielectric, ferroelectric, and piezoelectric properties of (001) BiScO 3-PbTiO3 epitaxial films near the morphotropic phase boundary

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Abstract

The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3-PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3-PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455°C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e 31,f was -12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e 31,f ∼ -12 C/m2) while the transition temperature is 100°C higher.

Original languageEnglish (US)
Pages (from-to)568-572
Number of pages5
JournalJournal of Materials Research
Volume19
Issue number2
DOIs
StatePublished - Feb 2004

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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