TY - JOUR
T1 - Dielectric, ferroelectric, and piezoelectric properties of (001) BiScO 3-PbTiO3 epitaxial films near the morphotropic phase boundary
AU - Nino, Juan C.
AU - Trolier-McKinstry, Susan
N1 - Funding Information:
The authors are grateful to Tom Shrout for synthesis of the ceramic target and Mark Angelone for the assistance in the EPMA characterization. Support for this work was provided by the Office of Naval Research, Northrop Grumman, and the National Science Foundation.
PY - 2004/2
Y1 - 2004/2
N2 - The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3-PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3-PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455°C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e 31,f was -12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e 31,f ∼ -12 C/m2) while the transition temperature is 100°C higher.
AB - The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3-PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3-PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455°C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e 31,f was -12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e 31,f ∼ -12 C/m2) while the transition temperature is 100°C higher.
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U2 - 10.1557/jmr.2004.0069
DO - 10.1557/jmr.2004.0069
M3 - Article
AN - SCOPUS:1842665180
SN - 0884-2914
VL - 19
SP - 568
EP - 572
JO - Journal of Materials Research
JF - Journal of Materials Research
IS - 2
ER -