Dielectric properties of an ultra-low-temperature cofiring Bi ₂Mo₂O₉ multilayer

A Bi₂Mo₂O₉ multilayer ceramic capacitor structure was fabricated in a thick-film process involving tape casting and screen-printing forming techniques. A novel base metal, Al, was used as the internal electrode, and these dielectrics were co-sintered at 645°C in air. Scanning electron microscopy and energy dispersive spectroscopy (EDS) were used to investigate the local chemical compatibility between the electrode layer and ceramic layer, and no reaction or interdiffusion was found. Dielectric properties of electroded monolithic ceramic, multilayer, and monolayer samples at 100 Hz-10 MHz in a temperature range of -55°-+175°C were measured; values of the dielectric properties were similar to bulk measurements consistent with the absence of any interfacial reaction. Collectively, the data show that it is possible to use the low-temperature firing Bi₂Mo ₂O₉ ceramic and Al internal electrode for an ultra-low-temperature cofired ceramic technology.