TY - GEN
T1 - Dielectric Response and Charge Injection Behavior for Cu/PMMA/Pt and Cu/PMMA/n-Si
AU - Nieves, Cesar A.
AU - Lanagan, Michael T.
N1 - Funding Information:
This material is based upon work supported by the National Science Foundation Graduate Research Fellowship Program (DGE1255832). Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the National Science Foundation. The authors would also like to thank The Material Research Institute and their staff at Penn State, and to Roger C. Walker II and Hossein Hamedi, PhD Candidates at Penn State for their help in sample preparation and experimental analysis.
Publisher Copyright:
© 2019 IEEE.
PY - 2019/10
Y1 - 2019/10
N2 - Metal - Insulator - Metal (MIM) and Metal - Insulator- Semiconductor (MIS) capacitors were fabricated by spin coating poly (methyl methacrylate) (PMMA) as the insulating material. Here, we consider the effect of dissimilar contact electrodes systems (Cu/Pt and Cu/n-Si) on the dielectric and electrical response. From the frequency- and temperature- dependent dielectric measurements, it was found that Cu/PMMA/n-Si interface has an additional contribution that affects the dielectric properties. Activation energies obtained from the ohmic conduction in forward bias showed a higher value in activation energy for Cu/PMMA/n-Si compared to that for Cu/PMMA/Pt, demonstrating the possible contribution of interfacial regions. Further experiments under reverse bias were carried out to study the importance of polarization in the electrical response.
AB - Metal - Insulator - Metal (MIM) and Metal - Insulator- Semiconductor (MIS) capacitors were fabricated by spin coating poly (methyl methacrylate) (PMMA) as the insulating material. Here, we consider the effect of dissimilar contact electrodes systems (Cu/Pt and Cu/n-Si) on the dielectric and electrical response. From the frequency- and temperature- dependent dielectric measurements, it was found that Cu/PMMA/n-Si interface has an additional contribution that affects the dielectric properties. Activation energies obtained from the ohmic conduction in forward bias showed a higher value in activation energy for Cu/PMMA/n-Si compared to that for Cu/PMMA/Pt, demonstrating the possible contribution of interfacial regions. Further experiments under reverse bias were carried out to study the importance of polarization in the electrical response.
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U2 - 10.1109/CEIDP47102.2019.9009650
DO - 10.1109/CEIDP47102.2019.9009650
M3 - Conference contribution
AN - SCOPUS:85081675990
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
SP - 454
EP - 457
BT - 2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 IEEE Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2019
Y2 - 20 October 2019 through 23 October 2019
ER -