Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry

S. Evoy; N. DiLello; V. Deshpande; A. Narayanan; H. Liu; M. Riegelman; B. R. Martin; B. Hailer; J. C. Bradley; W. Weiss; T. S. Mayer; Y. Gogotsi; H. H. Bau; T. E. Mallouk; S. Raman

doi:10.1016/j.mee.2003.09.010

Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry

S. Evoy, N. DiLello, V. Deshpande, A. Narayanan, H. Liu, M. Riegelman, B. R. Martin, B. Hailer, J. C. Bradley, W. Weiss, T. S. Mayer, Y. Gogotsi, H. H. Bau, T. E. Mallouk, S. Raman

Research output: Contribution to journal › Conference article › peer-review

93 Scopus citations

Abstract

We present a novel platform for the development and deployment of nanosensors in integrated systems. The nanosensor technology is based on "striped" high aspect ratio cylindrical structures grown using porous membranes as templates. These nanostructures are manipulated using dielectrophoretic forces, allowing their individual assembly and characterization. This assembly also enables the development of "mixed-mode" integrated circuits that include readout, signal processing, and communications circuitry, as well as the requisite layout for the post-IC assembly of the nanostructures. We report on preliminary designs of such mixed mode systems whose layouts integrate dielectrophoretic assembly sites with a rudimentary resistance read-out circuitry.

Original language	English (US)
Pages (from-to)	31-42
Number of pages	12
Journal	Microelectronic Engineering
Volume	75
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2003.09.010
State	Published - Jul 2004
Event	Proceedings of the Symposium on Characterization - Phoenix, AZ, United States Duration: Jun 17 2003 → Jun 20 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2003.09.010

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Evoy, S., DiLello, N., Deshpande, V., Narayanan, A., Liu, H., Riegelman, M., Martin, B. R., Hailer, B., Bradley, J. C., Weiss, W., Mayer, T. S., Gogotsi, Y., Bau, H. H., Mallouk, T. E., & Raman, S. (2004). Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry. Microelectronic Engineering, 75(1), 31-42. https://doi.org/10.1016/j.mee.2003.09.010

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title = "Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry",

abstract = "We present a novel platform for the development and deployment of nanosensors in integrated systems. The nanosensor technology is based on {"}striped{"} high aspect ratio cylindrical structures grown using porous membranes as templates. These nanostructures are manipulated using dielectrophoretic forces, allowing their individual assembly and characterization. This assembly also enables the development of {"}mixed-mode{"} integrated circuits that include readout, signal processing, and communications circuitry, as well as the requisite layout for the post-IC assembly of the nanostructures. We report on preliminary designs of such mixed mode systems whose layouts integrate dielectrophoretic assembly sites with a rudimentary resistance read-out circuitry.",

author = "S. Evoy and N. DiLello and V. Deshpande and A. Narayanan and H. Liu and M. Riegelman and Martin, {B. R.} and B. Hailer and Bradley, {J. C.} and W. Weiss and Mayer, {T. S.} and Y. Gogotsi and Bau, {H. H.} and Mallouk, {T. E.} and S. Raman",

note = "Funding Information: A. Narayanan, S. Evoy, and S. Raman acknowledge funding from NSF collaborative research awards #ECS-0225439 and #ECS-0225496. They also thank Motorola Semiconductor Products Sector, Austin, TX, in particular Chris Magnella and Michael Clifford, for providing access to their HIP6W 0.18 μm BiCMOS technology for this project. N. DiLello and V. Deshpande have received summer salary support from NSF REU program #EEC-0244055.M. Riegelman, J.C. Bradley, Y. Gogotsi, and H.H. Bau are supported by NSF NIRT program #CTS-0210579. H. Liu and H.H. Bau are supported by DARPA SIMBIOS program N66001-01-C-8056. M. Riegelman also acknowledges further support from a GAANN fellowship. Transmission electron microscopy of carbon tubes was performed by Dr. H.Ye.B.R. Martin, W. Weiss, T.E. Mallouk, and T.S. Mayer were supported by DARPA and ONR under contract N00014-01-10659. ; Proceedings of the Symposium on Characterization ; Conference date: 17-06-2003 Through 20-06-2003",

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doi = "10.1016/j.mee.2003.09.010",

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Evoy, S, DiLello, N, Deshpande, V, Narayanan, A, Liu, H, Riegelman, M, Martin, BR, Hailer, B, Bradley, JC, Weiss, W, Mayer, TS, Gogotsi, Y, Bau, HH, Mallouk, TE & Raman, S 2004, 'Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry', Microelectronic Engineering, vol. 75, no. 1, pp. 31-42. https://doi.org/10.1016/j.mee.2003.09.010

TY - JOUR

T1 - Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry

AU - Evoy, S.

AU - DiLello, N.

AU - Deshpande, V.

AU - Narayanan, A.

AU - Liu, H.

AU - Riegelman, M.

AU - Martin, B. R.

AU - Hailer, B.

AU - Bradley, J. C.

AU - Weiss, W.

AU - Mayer, T. S.

AU - Gogotsi, Y.

AU - Bau, H. H.

AU - Mallouk, T. E.

AU - Raman, S.

N1 - Funding Information: A. Narayanan, S. Evoy, and S. Raman acknowledge funding from NSF collaborative research awards #ECS-0225439 and #ECS-0225496. They also thank Motorola Semiconductor Products Sector, Austin, TX, in particular Chris Magnella and Michael Clifford, for providing access to their HIP6W 0.18 μm BiCMOS technology for this project. N. DiLello and V. Deshpande have received summer salary support from NSF REU program #EEC-0244055.M. Riegelman, J.C. Bradley, Y. Gogotsi, and H.H. Bau are supported by NSF NIRT program #CTS-0210579. H. Liu and H.H. Bau are supported by DARPA SIMBIOS program N66001-01-C-8056. M. Riegelman also acknowledges further support from a GAANN fellowship. Transmission electron microscopy of carbon tubes was performed by Dr. H.Ye.B.R. Martin, W. Weiss, T.E. Mallouk, and T.S. Mayer were supported by DARPA and ONR under contract N00014-01-10659.

PY - 2004/7

Y1 - 2004/7

N2 - We present a novel platform for the development and deployment of nanosensors in integrated systems. The nanosensor technology is based on "striped" high aspect ratio cylindrical structures grown using porous membranes as templates. These nanostructures are manipulated using dielectrophoretic forces, allowing their individual assembly and characterization. This assembly also enables the development of "mixed-mode" integrated circuits that include readout, signal processing, and communications circuitry, as well as the requisite layout for the post-IC assembly of the nanostructures. We report on preliminary designs of such mixed mode systems whose layouts integrate dielectrophoretic assembly sites with a rudimentary resistance read-out circuitry.

AB - We present a novel platform for the development and deployment of nanosensors in integrated systems. The nanosensor technology is based on "striped" high aspect ratio cylindrical structures grown using porous membranes as templates. These nanostructures are manipulated using dielectrophoretic forces, allowing their individual assembly and characterization. This assembly also enables the development of "mixed-mode" integrated circuits that include readout, signal processing, and communications circuitry, as well as the requisite layout for the post-IC assembly of the nanostructures. We report on preliminary designs of such mixed mode systems whose layouts integrate dielectrophoretic assembly sites with a rudimentary resistance read-out circuitry.

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UR - http://www.scopus.com/inward/citedby.url?scp=2942579312&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2003.09.010

DO - 10.1016/j.mee.2003.09.010

M3 - Conference article

AN - SCOPUS:2942579312

SN - 0167-9317

VL - 75

SP - 31

EP - 42

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the Symposium on Characterization

Y2 - 17 June 2003 through 20 June 2003

ER -

Dielectrophoretic assembly and integration of nanowire devices with functional CMOS operating circuitry

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