Diode current detection of extended x-ray absorption fine structure in gallium arsenide

R. F. Boehme; G. S. Cargill; W. Weber; Thomas Nelson Jackson

doi:10.1063/1.336149

Diode current detection of extended x-ray absorption fine structure in gallium arsenide

R. F. Boehme, G. S. Cargill, W. Weber, Thomas Nelson Jackson

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13 Scopus citations

Abstract

Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.

Original language	English (US)
Pages (from-to)	811-815
Number of pages	5
Journal	Journal of Applied Physics
Volume	58
Issue number	2
DOIs	https://doi.org/10.1063/1.336149
State	Published - Dec 1 1985

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.336149

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title = "Diode current detection of extended x-ray absorption fine structure in gallium arsenide",

abstract = "Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-{\AA}-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.",

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year = "1985",

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AU - Boehme, R. F.

AU - Cargill, G. S.

AU - Weber, W.

AU - Jackson, Thomas Nelson

PY - 1985/12/1

Y1 - 1985/12/1

N2 - Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.

AB - Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.

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Diode current detection of extended x-ray absorption fine structure in gallium arsenide

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