Abstract
Measurement of diode photocurrent represents a new method for obtaining extended x-ray absorption fine structure (EXAFS) information specific to the junction region of a diode. EXAFS measurements at Ga and As K edges of an aluminum-on-GaAs Schottky diode have been used to demonstrate this new technique. The spectra observed in the diode current arise mainly from x-ray absorption events within 2 μm of the diode junction, i.e., within a minority carrier diffusion length of the approximately 600-Å-wide depletion region. The diode current EXAFS are consistent with EXAFS obtained from fluorescence measurements.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 811-815 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 58 |
| Issue number | 2 |
| DOIs | |
| State | Published - Dec 1 1985 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy
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