Direct experimental evidence for a dominant hole trapping center in SIMOX oxides

John F. Conlev, Patrick M. Lenahan, P. Roitman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


There is significant interest in the application of siliconon-insulator (SOI) technologies in environments requiring substantial radiation hardness. In such environments, trapping of charge carriers in the buried oxide is of some concern. We have begun to explore trapping centers in SIMOX buried oxides using a combination of electron paramagnetic resonance (EPR) and vacuum ultraviolet (hc/λ- = 10.2 ev) and ultraviolet (hc/λ = 5 ev) irradiation sequences. In this abstract, we present experimental evidence which strongly indicates that E' centers or E' like centers play an important role in hole trapping in SIMOX oxides. The E' center is a silicon back-bonded to three oxygen atoms; in thermally grown SiO2 films on silicon it is the dominant deep hole trap and is almost certainly a hole trapped in an oxygen vacancy.

Original languageEnglish (US)
Title of host publication1990 IEEE SOS/SOI Technology Conference, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0879425733, 9780879425739
StatePublished - Jan 1 1990
Event1990 IEEE SOS/SOI Technology Conference - Key West, United States
Duration: Oct 2 1990Oct 4 1990

Publication series

Name1990 IEEE SOS/SOI Technology Conference, Proceedings


Conference1990 IEEE SOS/SOI Technology Conference
Country/TerritoryUnited States
CityKey West

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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