Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

P. M. Lenahan; T. D. Mishima; J. Jumper; T. N. Fogarty; R. T. Wilkins

doi:10.1109/23.983184

Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

P. M. Lenahan
, T. D. Mishima
, J. Jumper
, T. N. Fogarty
, R. T. Wilkins

Engineering Science and Mechanics

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P _b1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO ₂ interface trap defect, the P _b0 center.

Original language	English (US)
Pages (from-to)	2131-2135
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	48
Issue number	6 I
DOIs	https://doi.org/10.1109/23.983184
State	Published - Dec 2001
Event	2001 Nuclear and Sapce Radiation Effects Conference (NSREC) - Vancouver, BC, Canada Duration: Jul 16 2001 → Jul 20 2001

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/23.983184

Cite this

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title = "Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process",

abstract = "We have identified atomic scale processes involved in the so called {"}interface trap transformation{"} process. These changes involve the generation of a silicon {"}dangling bond{"} defect called P b1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO 2 interface trap defect, the P b0 center.",

author = "Lenahan, \{P. M.\} and Mishima, \{T. D.\} and J. Jumper and Fogarty, \{T. N.\} and Wilkins, \{R. T.\}",

note = "Funding Information: Manuscript received July 17, 2001. This work was supported in part by NASA. P. M. Lenahan is with the Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802 USA (e-mail: [email protected]). T. D. Mishima was with Penn State University, University Park, PA 16802 USA. He is now with the Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73069 USA (e-mail: [email protected]). J. Jumper was with Penn State University, University Park, PA 16802 USA. He is now with Fairchild Semiconductor, Mountain Top, PA 18707 USA (e-mail: [email protected]). T. N. Fogarty and R. T. Wilkins are with Prairie View A\&M University, Prairie View, TX 77446 USA (e-mail: t\[email protected]; r\[email protected]). Publisher Item Identifier S 0018-9499(01)10655-6.; 2001 Nuclear and Sapce Radiation Effects Conference (NSREC) ; Conference date: 16-07-2001 Through 20-07-2001",

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pages = "2131--2135",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Jumper, J.

AU - Fogarty, T. N.

AU - Wilkins, R. T.

N1 - Funding Information: Manuscript received July 17, 2001. This work was supported in part by NASA. P. M. Lenahan is with the Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802 USA (e-mail: [email protected]). T. D. Mishima was with Penn State University, University Park, PA 16802 USA. He is now with the Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73069 USA (e-mail: [email protected]). J. Jumper was with Penn State University, University Park, PA 16802 USA. He is now with Fairchild Semiconductor, Mountain Top, PA 18707 USA (e-mail: [email protected]). T. N. Fogarty and R. T. Wilkins are with Prairie View A&M University, Prairie View, TX 77446 USA (e-mail: [email protected]; [email protected]). Publisher Item Identifier S 0018-9499(01)10655-6.

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N2 - We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P b1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO 2 interface trap defect, the P b0 center.

AB - We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P b1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO 2 interface trap defect, the P b0 center.

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JF - IEEE Transactions on Nuclear Science

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ER -

Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

Abstract

All Science Journal Classification (ASJC) codes

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