Direct lithographic top contacts for pentacene organic thin-film transistors

C. C. Kuo; T. N. Jackson

doi:10.1063/1.3050110

Direct lithographic top contacts for pentacene organic thin-film transistors

C. C. Kuo, T. N. Jackson

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2 /V-s. Contact resistance extracted from these OTFTs is about (5× 107) - (5× 108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.

Original language	English (US)
Article number	053304
Journal	Applied Physics Letters
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.3050110
State	Published - 2009

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3050110

Cite this

@article{1e1ec6fb25f94ac58599ddc93c768f78,

title = "Direct lithographic top contacts for pentacene organic thin-film transistors",

abstract = "We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2 /V-s. Contact resistance extracted from these OTFTs is about (5× 107) - (5× 108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.",

author = "Kuo, \{C. C.\} and Jackson, \{T. N.\}",

year = "2009",

doi = "10.1063/1.3050110",

language = "English (US)",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Direct lithographic top contacts for pentacene organic thin-film transistors

AU - Kuo, C. C.

AU - Jackson, T. N.

PY - 2009

Y1 - 2009

N2 - We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2 /V-s. Contact resistance extracted from these OTFTs is about (5× 107) - (5× 108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.

AB - We report a process to fabricate metallic source and drain contacts on pentacene thin films with channel resolution less than 10 μm. Organic thin-film transistors (OTFTs) made by this method can have field-effect mobility of 0.3 cm2 /V-s. Contact resistance extracted from these OTFTs is about (5× 107) - (5× 108) Ω μm which is lower than that typical for bottom contact devices. Such performance in OTFTs demonstrates this method's value for fabricating organic electronics.

UR - https://www.scopus.com/pages/publications/59849090714

UR - https://www.scopus.com/inward/citedby.url?scp=59849090714&partnerID=8YFLogxK

U2 - 10.1063/1.3050110

DO - 10.1063/1.3050110

M3 - Article

AN - SCOPUS:59849090714

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053304

ER -

Direct lithographic top contacts for pentacene organic thin-film transistors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this