Direct Measurement of the Spin Polarization of the Magnetic Semiconductor (Ga, Mn)As

J. G. Braden; J. S. Parker; P. Xiong; S. H. Chun; N. Samarth

doi:10.1103/PhysRevLett.91.056602

Direct Measurement of the Spin Polarization of the Magnetic Semiconductor (Ga, Mn)As

J. G. Braden, J. S. Parker, P. Xiong, S. H. Chun, N. Samarth

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2 Scopus citations

Abstract

We have carried out a direct measurement of the degree of spin polarization ([Formula presented]) of the magnetic semiconductor [Formula presented] using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency [Formula presented] junctions consistently yield an intrinsic value for [Formula presented] greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.

Original language	English (US)
Journal	Physical review letters
Volume	91
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevLett.91.056602
State	Published - Jul 31 2003

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.91.056602

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title = "Direct Measurement of the Spin Polarization of the Magnetic Semiconductor (Ga, Mn)As",

abstract = "We have carried out a direct measurement of the degree of spin polarization ([Formula presented]) of the magnetic semiconductor [Formula presented] using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency [Formula presented] junctions consistently yield an intrinsic value for [Formula presented] greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.",

author = "Braden, {J. G.} and Parker, {J. S.} and P. Xiong and Chun, {S. H.} and N. Samarth",

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AU - Braden, J. G.

AU - Parker, J. S.

AU - Xiong, P.

AU - Chun, S. H.

AU - Samarth, N.

PY - 2003/7/31

Y1 - 2003/7/31

N2 - We have carried out a direct measurement of the degree of spin polarization ([Formula presented]) of the magnetic semiconductor [Formula presented] using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency [Formula presented] junctions consistently yield an intrinsic value for [Formula presented] greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.

AB - We have carried out a direct measurement of the degree of spin polarization ([Formula presented]) of the magnetic semiconductor [Formula presented] using Andreev reflection spectroscopy. Analyses of the conductance spectra of high transparency [Formula presented] junctions consistently yield an intrinsic value for [Formula presented] greater than 85%. Our experiments also revealed an extreme sensitivity of the measured spin polarization to the nature and quality of the interface for this material.

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Direct Measurement of the Spin Polarization of the Magnetic Semiconductor (Ga, Mn)As

Abstract

All Science Journal Classification (ASJC) codes

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